Search for: All records

Due to their non-volatility and intrinsic current integration capabilities, spintronic devices that rely on domain wall (DW) motion through a free ferromagnetic track have garnered significant interest in the field of neuromorphic computing. Although a number of such devices have already been proposed, they require the use of external circuitry to implement several important neuronal behaviors. As such, they are likely to result in either a decrease in energy efficiency, an increase in fabrication complexity, or even both. To resolve this issue, we have proposed three individual neurons that are capable of performing these functionalities without the use of any external circuitry. To implement leaking, the first neuron uses a dipolar coupling field, the second uses an anisotropy gradient, and the third uses shape variations of the DW track. 

The challenge of developing an efficient artificial neuron is impeded by the use of external CMOS circuits to perform leaking and lateral inhibition. The proposed leaky integrate-and-fire neuron based on the three terminal magnetic tunnel junction (3T-MTJ) performs integration by pushing its domain wall (DW) with spin-transfer or spin-orbit torque. The leaking capability is achieved by pushing the neurons’ DWs in the direction opposite of integration using a stray field from a hard ferromagnet or a non-uniform energy landscape resulting from shape or anisotropy variation. Firing is performed by the MTJ stack. Finally, analog lateral inhibition is achieved by dipolar field repulsive coupling from each neuron. An integrating neuron thus pushes slower neighboring neurons’ DWs in the direction opposite of integration. Applying this lateral inhibition to a ten-neuron output layer within a neuromorphic crossbar structure enables the identification of handwritten digits with 94% accuracy.